1. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing

    Ito, S; Sato, S; Bockowski, M; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Yoshida, K; Minagawa, H; Hagura, N

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   547 巻   2024年2月

  2. 15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W

    Kawasaki, S; Kumabe, T; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE TRANSACTIONS ON ELECTRON DEVICES     2023年12月

  3. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic

    Lu, S; Deki, M; Kumabe, T; Wang, J; Ohnishi, K; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   122 巻 ( 14 )   2023年4月

  4. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars 査読有り Open Access

    Shin-ichiro Sato, Shuo Li, Andrew D. Greentree, Manato Deki, Tomoaki Nishimura, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Brant C. Gibson, and Takeshi Ohshima

    Scientific Reports   12 巻   頁： 21208   2022年12月

  5. Substitutional diffusion of Mg into GaN from GaN/Mg mixture 査読有り Open Access

    Yuta Itoh, Shun Lu, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Yoshio Honda, Atsushi Tanaka, and Hiroshi Amano

    APPLIED PHYSICS EXPRESS   15 巻 ( 11 ) 頁： 116505   2022年11月

  6. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy 査読有り Open Access

    Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Shun Lu, Manato Deki, Yoshio Honda, and Hiroshi Amano

    Journal of Applied Physics   132 巻   頁： 145703   2022年10月

  7. An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs using Rational Functions and Dependent Current Sources 査読有り Open Access

    Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Biplab Sarkar

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   10 巻   頁： 797 - 807   2022年9月

  8. Evaluation of etching damage of unintentionally doped GaN by <i>C</i>-<i>V</i> characteristics for charge balance evaluation of polarization superjunction GaN FET Open Access

    Kokubo, E; Watanabe, H; Deki, M; Tanaka, A; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   19 巻 ( 3 )   2026年3月

  9. On-State Current Increasing Structure of Source-Connected Polarization Superjunction Transistor Open Access

    Kokubo, E; Watanabe, H; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   222 巻 ( 23 )   2025年12月

  10. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

    Kawasaki, S; Kumabe, T; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H

    IEEE ELECTRON DEVICE LETTERS   44 巻 ( 8 ) 頁： 1328 - 1331   2023年8月

  11. Evaluation of Switching Characteristics of High Breakdown Voltage GaN-PSJ Transistors at Liquid Nitrogen Temperature

    Deki, M; Kawarabayashi, H; Honda, Y; Amano, H

    AIAA AVIATION 2023 FORUM     2023年

  12. Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars Open Access

    Sato, SI; Li, S; Greentree, AD; Deki, M; Nishimura, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Gibson, BC; Ohshima, T

    SCIENTIFIC REPORTS   12 巻 ( 1 )   2022年12月

  13. Substitutional diffusion of Mg into GaN from GaN/Mg mixture Open Access

    Itoh, Y; Lu, S; Watanabe, H; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 11 )   2022年11月

  14. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy Open Access

    Ohnishi, K; Fujimoto, N; Nitta, S; Watanabe, H; Lu, S; Deki, M; Honda, Y; Amano, H

    JOURNAL OF APPLIED PHYSICS   132 巻 ( 14 )   2022年10月

  15. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN 査読有り Open Access

    Itoh, Y; Watanabe, H; Ando, Y; Kano, E; Deki, M; Nitta, S; Honda, Y; Tanaka, A; Ikarashi, N; Amano, H

    APPLIED PHYSICS EXPRESS   15 巻 ( 2 )   2022年2月

  16. An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources Open Access

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   10 巻   頁： 797 - 807   2022年

  17. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg 査読有り Open Access

    Lu, S; Deki, M; Wang, J; Ohnishi, K; Ando, Y; Kumabe, T; Watanabe, H; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   119 巻 ( 24 )   2021年12月

  18. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions 査読有り

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Nitta, S; Honda, Y; Amano, H; Roy, S; Sarkar, B

    IEEE TRANSACTIONS ON ELECTRON DEVICES   68 巻 ( 12 ) 頁： 6059 - 6064   2021年12月

  19. Impact of gate electrode formation process on Al<sub>2</sub>O<sub>3</sub>/GaN interface properties and channel mobility 査読有り

    Ando, Y; Deki, M; Watanabe, H; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Yamada, H; Shimizu, M; Nakamura, T; Amano, H

    APPLIED PHYSICS EXPRESS   14 巻 ( 8 )   2021年8月

  20. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers 査読有り

    Matsukura, Y; Inazu, T; Pernot, C; Shibata, N; Kushimoto, M; Deki, M; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   14 巻 ( 8 )   2021年8月

  21. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching 査読有り Open Access

    Kumabe, T; Ando, Y; Watanabe, H; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   60 巻 ( SB )   2021年5月

  22. Experimental demonstration of GaN IMPATT diode at X-band 査読有り

    Kawasaki, S; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Nitta, S; Honda, Y; Arai, M; Amano, H

    APPLIED PHYSICS EXPRESS   14 巻 ( 4 )   2021年4月

  23. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching 査読有り

    Yamada, T; Ando, Y; Watanabe, H; Furusawa, Y; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Suda, J; Amano, H

    APPLIED PHYSICS EXPRESS   14 巻 ( 3 )   2021年3月

  24. Optical properties of neodymium ions in nanoscale regions of gallium nitride (vol 10, pg 2614, 2020) Open Access

    Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

    OPTICAL MATERIALS EXPRESS   11 巻 ( 2 ) 頁： 524 - 524   2021年2月

  25. Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs 査読有り Open Access

    Jadhav, A; Ozawa, T; Baratov, A; Asubar, JT; Kuzuhara, M; Wakejima, A; Yamashita, S; Deki, M; Honda, Y; Roy, S; Amano, H; Sarkar, B

    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   9 巻   頁： 570 - 581   2021年

  26. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al<sub>2</sub>O<sub>3</sub>/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

    Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

    APPLIED PHYSICS LETTERS   117 巻 ( 24 )   2020年12月

  27. Modeling the degradation mechanisms of AlGaN-based UV-C LEDs: from injection efficiency to mid-gap state generation

    Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

    PHOTONICS RESEARCH   8 巻 ( 11 ) 頁： 1786 - 1791   2020年11月

  28. Optical properties of neodymium ions in nanoscale regions of gallium nitride Open Access

    Sato, SI; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Nishimura, T; Gibson, BC; Greentree, AD; Amano, H; Ohshima, T

    OPTICAL MATERIALS EXPRESS   10 巻 ( 10 ) 頁： 2614 - 2623   2020年10月

  29. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures

    Sato, S; Deki, M; Nishimura, T; Okada, H; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Ohshima, T

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   479 巻   頁： 7 - 12   2020年9月

  30. Low interface state densities at Al<sub>2</sub>O<sub>3</sub>/GaN interfaces formed on vicinal polar and non-polar surfaces Open Access

    Ando, Y; Nagamatsu, K; Deki, M; Taoka, N; Tanaka, A; Nitta, S; Honda, Y; Nakamura, T; Amano, H

    APPLIED PHYSICS LETTERS   117 巻 ( 10 )   2020年9月

  31. Change of high-voltage conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures

    Sandupatla, A; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   13 巻 ( 7 ) 頁： .   2020年7月

  32. Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering

    Kushimoto, M; Sakai, T; Ueoka, Y; Tomai, S; Katsumata, S; Deki, M; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   217 巻 ( 14 )   2020年7月

  33. Impact of high-temperature implantation of Mg ions into GaN Open Access

    Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 5 ) 頁： .   2020年5月

  34. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi, M; Tanaka, A; Ando, Y; Watanabe, H; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Shima, K; Kojima, K; Chichibu, SF; Chen, KJ; Amano, H

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   257 巻 ( 4 )   2020年4月

  35. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

    Abhinay, S; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 巻 ( 1 )   2020年1月

  36. Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

    Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

    GALLIUM NITRIDE MATERIALS AND DEVICES XV   11280 巻   2020年

  37. Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy α-particle detection

    Sandupatia, A; Arulkurnaran, S; Ranjan, K; Ng, GI; Murumu, PP; Kennedy, J; Deki, M; Nitta, S; Honda, Y; Amano, H

    2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020)     2020年

  38. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao, YQ; Chen, T; Wang, J; Ando, Y; Yang, X; Watanabe, H; Hirotani, J; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Chen, KJ; Amano, H

    PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)     頁： 349 - 352   2020年

  39. Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency Open Access

    Sandupatla, A; Arulkumaran, S; Ranjan, K; Ng, GI; Murmu, PP; Kennedy, J; Nitta, S; Honda, Y; Deki, M; Amano, H

    SENSORS   19 巻 ( 23 )   2019年12月

  40. Stability and degradation of AlGaN-based UV-B LEDs: Role of doping and semiconductor defects

    Piva, F; De Santi, C; Deki, M; Kushimoto, M; Amano, H; Tomozawa, H; Shibata, N; Meneghesso, G; Zanoni, E; Meneghini, M

    MICROELECTRONICS RELIABILITY   100 巻   2019年9月

  41. V-shaped dislocations in a GaN epitaxial layer on GaN substrate Open Access

    Tanaka, A; Nagamatsu, K; Usami, S; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Bockowski, M; Amano, H

    AIP ADVANCES   9 巻 ( 9 )   2019年9月

  42. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III - Nitride epitaxial growth Open Access

    Ye, Z; Nitta, S; Nagamatsu, K; Fujimoto, N; Kushimoto, M; Deki, M; Tanaka, A; Honda, Y; Pristovsek, M; Amano, H

    JOURNAL OF CRYSTAL GROWTH   516 巻   頁： 63 - 66   2019年6月

  43. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

    Usami, S; Mayama, N; Toda, K; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS LETTERS   114 巻 ( 23 )   2019年6月

  44. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates Open Access

    Usami, S; Tanaka, A; Fukushima, H; Ando, Y; Deki, M; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻   2019年6月

  45. Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors Open Access

    Uemura, K; Deki, M; Honda, Y; Amano, H; Sato, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻   2019年6月

  46. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻   2019年6月

  47. Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)

    Liu, ZB; Nitta, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Sitar, Z; Amano, H

    JOURNAL OF CRYSTAL GROWTH   514 巻   頁： 13 - 13   2019年5月

  48. Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride

    Sato, S; Deki, M; Nakamura, T; Nishimura, T; Stavrevski, D; Greentree, AD; Gibson, BC; Ohshima, T

    JAPANESE JOURNAL OF APPLIED PHYSICS   58 巻 ( 5 )   2019年5月

  49. GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates Open Access

    Sandupatla, A; Arulkumaran, S; Ng, GI; Ranjan, K; Deki, M; Nitta, S; Honda, Y; Amano, H

    AIP ADVANCES   9 巻 ( 4 )   2019年4月

  50. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Open Access

    Liu, ZB; Nitta, S; Usami, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H

    JOURNAL OF CRYSTAL GROWTH   509 巻   頁： 50 - 53   2019年3月

  51. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics Open Access

    Yoshino, M; Ando, Y; Deki, M; Toyabe, T; Kuriyama, K; Honda, Y; Nishimura, T; Amano, H; Kachi, T; Nakamura, T

    MATERIALS   12 巻 ( 5 )   2019年3月

  52. Morphological study of InGaN on GaN substrate by supersaturation Open Access

    Liu, ZB; Nitta, S; Robin, Y; Kushimoto, M; Deki, M; Honda, Y; Pristovsek, M; Amano, H

    JOURNAL OF CRYSTAL GROWTH   508 巻   頁： 58 - 65   2019年2月

  53. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown Open Access

    Fukushima, H; Usami, S; Ogura, M; Ando, Y; Tanaka, A; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

    APPLIED PHYSICS EXPRESS   12 巻 ( 2 )   2019年2月

  54. Comparing high-purity <i>c</i>- and <i>m</i>-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu, K; Ando, Y; Ye, Z; Barry, O; Tanaka, A; Deki, M; Nitta, S; Honda, Y; Pristovsek, M; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 10 )   2018年10月

  55. Improvement of breakdown voltage of vertical GaN p-n junction diode with Ga<sub>2</sub>O<sub>3</sub> passivated by sputtering

    Ueoka, Y; Deki, M; Honda, Y; Amano, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 巻 ( 7 )   2018年7月

  56. <i>m</i>-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle <i>m</i>-Plane GaN Substrates 査読有り Open Access

    Tanaka, A; Ando, Y; Nagamatsu, K; Deki, M; Cheong, H; Ousmane, B; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215 巻 ( 9 ) 頁： 1700645   2018年5月

  57. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Usami, S; Ando, Y; Tanaka, A; Nagamatsu, K; Deki, M; Kushimoto, M; Nitta, S; Honda, Y; Amano, H; Sugawara, Y; Yao, YZ; Ishikawa, Y

    APPLIED PHYSICS LETTERS   112 巻 ( 18 )   2018年4月

  58. Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity 査読有り Open Access

    Tomita, T; Deki, M; Yanagita, E; Bando, Y; Naoi, Y; Makino, T; Ohshima, T

    JOURNAL OF LASER MICRO NANOENGINEERING   12 巻 ( 2 ) 頁： 72 - 75   2017年9月

  59. Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes

    Usami, S; Miyagoshi, R; Tanaka, A; Nagamatsu, K; Kushimoto, M; Deki, M; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 )   2017年8月

  60. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

    Tanaka, A; Barry, O; Nagamatsu, K; Matsushita, J; Deki, M; Ando, Y; Kushimoto, M; Nitta, S; Honda, Y; Amano, H

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214 巻 ( 8 )   2017年8月

  61. Effect of V/III ratio on the surface morphology and electrical properties of <i>m</i>-plane (10(1)over-bar0) GaN homoepitaxial layers

    Barry, OI; Tanaka, A; Nagamatsu, K; Bae, SY; Lekhal, K; Matsushita, J; Deki, M; Nitta, S; Honda, Y; Amano, H

    JOURNAL OF CRYSTAL GROWTH   468 巻   頁： 552 - 556   2017年6月

  62. Development of Sustainable Smart Society based on Transformative Electronics

    Ogura, M; Ando, Y; Usami, S; Nagamatsu, K; Kushimoto, M; Deki, M; Tanaka, A; Nitta, S; Honda, Y; Pristovsek, M; Kawai, H; Yagi, S; Amano, H

    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)     頁： .   2017年

  63. Effect of V/III ratio on the surface morphology and electrical properties of m-plane(10-10) GaN homoepitaxial layers 査読有り

    Ousmane I Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano

    Journal of Crystal Growth     頁： 10.1016   2016年12月

  64. Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum 査読有り

    Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano

    Japanese Journal of Applied Physics     頁： 05FG03   2016年4月

  65. Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition 査読有り

    Byung Oh Jung, Kaddour Lekhal, Sang-Yun Kim, Jung-Yong Lee, Dong-Seon Lee, Manto Deki, Yoshio Honda, and Hiroshi Amano

    CrystEngComm   ( 18 ) 頁： 1505   2016年1月

  66. Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors 査読有り

    Deki Manato, Makino Takahiro, Iwamoto Naoya, Onoda Shinobu, Kojima Kazutoshi, Tomita Takuro, Ohshima Takeshi

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   319 巻   頁： 75-78   2014年1月

  67. Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses 査読有り

    Deki Manato, Makino T., Kojima K., Tomita T., Ohshima T.

    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   778-780 巻   頁： 440-443   2014年

  68. Ternperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide 査読有り

    Deki Manato, Oka Tomoki, Takayoshi Shodai, Naoi Yoshiki, Makino Takahiro, Ohshima Takeshi, Tomita Takuro

    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2   778-780 巻   頁： 661-664   2014年

  69. Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes 査読有り

    Makino Takahiro, Deki Manato, Iwamoto Naoya, Onoda Shinobu, Hoshino Norihiro, Tsuchida Hidekazu, Hirao Toshio, Ohshima Takeshi

    IEEE TRANSACTIONS ON NUCLEAR SCIENCE   60 巻 ( 4 ) 頁： 2647-2650   2013年8月

  70. Electrical Conduction Properties of SiC Modified by Femtosecond Laser 査読有り Open Access

    Ito Takuto, Deki Manato, Tomita Takuro, Matsuo Shigeki, Hashimoto Shuichi, Kitada Takahiro, Isu Toshiro, Onoda Shinobu, Ohshima Takeshi

    JOURNAL OF LASER MICRO NANOENGINEERING   7 巻 ( 1 ) 頁： 16-20   2012年2月

  71. Enhancement of local electrical conductivities in SiC by femtosecond laser modification 査読有り

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    APPLIED PHYSICS LETTERS   98 巻 ( 13 )   2011年3月

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