1. Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

    Chichibu S.F., Shima K., Uedono A., Ishibashi S., Iguchi H., Narita T., Kataoka K., Tanaka R., Takashima S., Ueno K., Edo M., Watanabe H., Tanaka A., Honda Y., Suda J., Amano H., Kachi T., Nabatame T., Irokawa Y., Koide Y.

    Journal of Applied Physics   135 巻 ( 18 )   2024年5月

  2. 15 GHz GaN Hi-Lo IMPATT Diodes with Pulsed Peak Power of 25.5 W

    Kawasaki S., Kumabe T., Deki M., Watanabe H., Tanaka A., Honda Y., Arai M., Amano H.

    IEEE Transactions on Electron Devices   71 巻 ( 3 ) 頁： 1408 - 1415   2024年3月

  3. Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs

    Ishida T., Ushijima T., Nakabayashi S., Kato K., Koyama T., Nagasato Y., Ohara J., Hoshi S., Nagaya M., Hara K., Kanemura T., Taki M., Yui T., Hara K., Kawaguchi D., Kuno K., Osajima T., Kojima J., Uesugi T., Tanaka A., Sasaoka C., Onda S., Suda J.

    Applied Physics Express   17 巻 ( 2 )   2024年2月

  4. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

    Kawasaki S, Kumabe T, Ando Y, Deki M, Watanabe H, Tanaka A, Honda Y, Arai M, Amano H

    IEEE Electron Device Letters   44 巻 ( 8 ) 頁： 1328 - 1331   2023年8月

  5. Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes

    Kwon W, Kawasaki S, Watanabe H, Tanaka A, Honda Y, Ikeda H, Iso K, Amano H

    IEEE Electron Device Letters   44 巻 ( 7 ) 頁： 1172 - 1175   2023年7月

  6. Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro-LEDs Open Access

    Park J.H, Pristovsek M, Cai W, Cheong H, Tanaka A, Furusawa Y, Han D.P, Seong T.Y, Amano H

    Advanced Optical Materials   11 巻 ( 10 )   2023年5月

  7. Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors

    Inahara D., Matsuda S., Matsumura W., Okuno R., Hanasaku K., Kowaki T., Miyamoto M., Yao Y., Ishikawa Y., Tanaka A., Honda Y., Nitta S., Amano H., Kurai S., Okada N., Yamada Y.

    Physica Status Solidi (A) Applications and Materials Science   220 巻 ( 16 )   2023年5月

  8. Transient thermal analysis of GaN HEMT under TDD-LTE signal operation

    Ito S., Tsuchiya Y., Tanaka A., Suga T., Martinez N.T., Wakejima A.

    Asia-Pacific Microwave Conference Proceedings, APMC     頁： 567 - 569   2023年

  9. Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors (Scientific Reports, (2022), 12, 1, (7363), 10.1038/s41598-022-10610-4) Open Access

    Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

    Scientific Reports   12 巻 ( 1 )   2022年12月

  10. Laser slice thinning of GaN-on-GaN high electron mobility transistors Open Access

    Tanaka A, Sugiura R, Kawaguchi D, Wani Y, Watanabe H, Sena H, Ando Y, Honda Y, Igasaki Y, Wakejima A, Ando Y, Amano H

    Scientific Reports   12 巻 ( 1 )   2022年12月

  11. Substitutional diffusion of Mg into GaN from GaN/Mg mixture Open Access

    Itoh Y, Lu S, Watanabe H, Deki M, Nitta S, Honda Y, Tanaka A, Amano H

    Applied Physics Express   15 巻 ( 11 )   2022年11月

  12. Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate

    Ma Q, Ando Y, Tanaka A, Wakejima A

    Applied Physics Express   15 巻 ( 9 )   2022年9月

  13. "regrowth-free" fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration Open Access

    Kumabe T, Watanabe H, Ando Y, Tanaka A, Nitta S, Honda Y, Amano H

    Applied Physics Express   15 巻 ( 4 )   2022年4月

  14. Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process Open Access

    Liao Y, Chen T, Wang J, Cai W, Ando Y, Yang X, Watanabe H, Tanaka A, Nitta S, Honda Y, Chen K.J, Amano H

    Applied Physics Letters   120 巻 ( 12 )   2022年3月

  15. Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN Open Access

    Itoh Y., Watanabe H., Ando Y., Kano E., Deki M., Nitta S., Honda Y., Tanaka A., Ikarashi N., Amano H.

    Applied Physics Express   15 巻 ( 2 )   2022年2月

  16. Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate Open Access

    Ma Q, Urano S, Tanaka A, Ando Y, Wakejima A

    IEEE Journal of the Electron Devices Society   10 巻   頁： 297 - 300   2022年

  17. Smart-cut-like laser slicing of GaN substrate using its own nitrogen Open Access

    Tanaka A., Sugiura R., Kawaguchi D., Yui T., Wani Y., Aratani T., Watanabe H., Sena H., Honda Y., Igasaki Y., Amano H.

    Scientific Reports   11 巻 ( 1 )   2021年12月

  18. Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics

    Li L., Obata T., Fukui A., Takeuchi K., Suga T., Tanaka A., Wakejima A.

    Applied Physics Express   14 巻 ( 9 )   2021年9月

  19. Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing Open Access

    Sena H., Tanaka A., Wani Y., Aratani T., Yui T., Kawaguchi D., Sugiura R., Honda Y., Igasaki Y., Amano H.

    Applied Physics A: Materials Science and Processing   127 巻 ( 9 )   2021年9月

  20. Impact of gate electrode formation process on Al<inf>2</inf>O<inf>3</inf>/GaN interface properties and channel mobility

    Ando Y., Deki M., Watanabe H., Taoka N., Tanaka A., Nitta S., Honda Y., Yamada H., Shimizu M., Nakamura T., Amano H.

    Applied Physics Express   14 巻 ( 8 )   2021年8月

  21. Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

    Liao Y., Chen T., Wang J., Ando Y., Cai W., Yang X., Watanabe H., Hirotani J., Tanaka A., Nitta S., Honda Y., Chen K.J., Amano H.

    Japanese Journal of Applied Physics   60 巻 ( 7 )   2021年7月

  22. Low temperature bonding of GaN and carbon composite via Au capping layer activated by Ar fast atom bombardment

    Takeuchi K., Tadatomo S., Tanaka A., Wakejima A.

    2021 International Conference on Electronics Packaging, ICEP 2021     頁： 43 - 44   2021年5月

  23. Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching Open Access

    Kumabe T., Ando Y., Watanabe H., Deki M., Tanaka A., Nitta S., Honda Y., Amano H.

    Japanese Journal of Applied Physics   60 巻 ( SB )   2021年5月

  24. Experimental demonstration of GaN IMPATT diode at X-band

    Kawasaki S., Ando Y., Deki M., Watanabe H., Tanaka A., Nitta S., Honda Y., Arai M., Amano H.

    Applied Physics Express   14 巻 ( 4 )   2021年3月

  25. Fabrication of GaN cantilever on GaN substrate by photo-electrochemical etching

    Yamada T., Ando Y., Watanabe H., Furusawa Y., Tanaka A., Deki M., Nitta S., Honda Y., Suda J., Amano H.

    Applied Physics Express   14 巻 ( 3 )   2021年3月

  26. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer Open Access

    Liu T., Watanabe H., Nitta S., Wang J., Yu G., Ando Y., Honda Y., Amano H., Tanaka A., Koide Y.

    Applied Physics Letters   118 巻 ( 7 )   2021年2月

  27. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces 査読有り

    Yuto Ando, Kentaro Nagamatsu, Manato Deki, Noriyuki Taoka, Atsushi Tanaka, Shugo Nitta, Yoshio Honda, Tohru Nakamura, Hiroshi Amano

    Applied Physics Letters   117 巻 ( 24 ) 頁： 242104 - 242104   2020年12月

  28. Low interface state densities at Al<inf>2</inf>O<inf>3</inf>/GaN interfaces formed on vicinal polar and non-polar surfaces Open Access

    Ando Y., Nagamatsu K., Deki M., Taoka N., Tanaka A., Nitta S., Honda Y., Nakamura T., Amano H.

    Applied Physics Letters   117 巻 ( 10 )   2020年9月

  29. Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

    Liao Y., Chen T., Wang J., Ando Y., Yang X., Watanabe H., Hirotani J., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Chen K.J., Amano H.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs   2020-September 巻   頁： 349 - 352   2020年9月

  30. Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p-n diodes Open Access

    Nakano T., Harashima Y., Chokawa K., Shiraishi K., Oshiyama A., Kangawa Y., Usami S., Mayama N., Toda K., Tanaka A., Honda Y., Amano H.

    Applied Physics Letters   117 巻 ( 1 )   2020年7月

  31. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Open Access

    Liu Q., Fujimoto N., Shen J., Nitta S., Tanaka A., Honda Y., Sitar Z., Boćkowski M., Kumagai Y., Amano H.

    Journal of Crystal Growth   539 巻   2020年6月

  32. Oxygen Incorporation Kinetics in Vicinal m(10−10) Gallium Nitride Growth by Metal-Organic Vapor Phase Epitaxy

    Yosho D., Shintaku F., Inatomi Y., Kangawa Y., Iwata J.I., Oshiyama A., Shiraishi K., Tanaka A., Amano H.

    Physica Status Solidi - Rapid Research Letters   14 巻 ( 6 )   2020年6月

  33. Impact of high-Temperature implantation of Mg ions into GaN Open Access

    Takahashi M., Tanaka A., Ando Y., Watanabe H., Deki M., Kushimoto M., Nitta S., Honda Y., Shima K., Kojima K., Chichibu S.F., Amano H.

    Japanese Journal of Applied Physics   59 巻 ( 5 )   2020年5月

  34. Computational study of oxygen stability in vicinal m(10-10)-GaN growth by MOVPE Open Access

    Shintaku F., Yosho D., Kangawa Y., Iwata J.I., Oshiyama A., Shiraishi K., Tanaka A., Amano H.

    Applied Physics Express   13 巻 ( 5 )   2020年5月

  35. Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

    Tanaka A., Inotsume S., Harada S., Hanada K., Honda Y., Ujihara T., Amano H.

    Physica Status Solidi (B) Basic Research   257 巻 ( 4 )   2020年4月

  36. Suppression of Green Luminescence of Mg-Ion-Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

    Takahashi M., Tanaka A., Ando Y., Watanabe H., Deki M., Kushimoto M., Nitta S., Honda Y., Shima K., Kojima K., Chichibu S.F., Chen K.J., Amano H.

    Physica Status Solidi (B) Basic Research   257 巻 ( 4 )   2020年4月

  37. Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms Open Access

    Yamamoto K., Nakano K., Tanaka A., Honda Y., Ando Y., Ogura M., Matsumoto M., Anada S., Ishikawa Y., Amano H., Hirayama T.

    Microscopy   69 巻 ( 1 ) 頁： 1 - 10   2020年2月

  38. V-shaped dislocations in a GaN epitaxial layer on GaN substrate Open Access

    Tanaka A., Nagamatsu K., Usami S., Kushimoto M., Deki M., Nitta S., Honda Y., Bockowski M., Amano H.

    AIP Advances   9 巻 ( 9 )   2019年9月

  39. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth

    Ye Z., Nitta S., Nagamatsu K., Fujimoto N., Kushimoto M., Deki M., Tanaka A., Honda Y., Pristovsek M., Amano H.

    Journal of Crystal Growth   516 巻   頁： 63 - 66   2019年6月

  40. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p-n diodes and its effect on reverse leakage current

    Usami S., Mayama N., Toda K., Tanaka A., Deki M., Nitta S., Honda Y., Amano H.

    Applied Physics Letters   114 巻 ( 23 )   2019年6月

  41. Electronic structure analysis of core structures of threading dislocations in GaN

    Nakano T., Chokawa K., Araidai M., Shiraishi K., Oshiyama A., Kusaba A., Kangawa Y., Tanaka A., Honda Y., Amano H.

    2019 Compound Semiconductor Week, CSW 2019 - Proceedings     2019年5月

  42. Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown Open Access

    Fukushima H., Usami S., Ogura M., Ando Y., Tanaka A., Deki M., Kushimoto M., Nitta S., Honda Y., Amano H.

    Applied Physics Express   12 巻 ( 2 )   2019年2月

  43. Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer Open Access

    Kim J., Seo O., Tanaka A., Chen J., Watanabe K., Katsuya Y., Nabatame T., Irokawa Y., Koide Y., Sakata O.

    CrystEngComm   21 巻 ( 27 ) 頁： 4036 - 4041   2019年

  44. Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability

    Fukushima H., Usami S., Ogura M., Ando Y., Tanaka A., Deki M., Kushimoto M., Nitta S., Honda Y., Amano H.

    Japanese Journal of Applied Physics   58 巻 ( SC )   2019年

  45. Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p-n diodes on a free-standing GaN substrates Open Access

    Usami S., Tanaka A., Fukushima H., Ando Y., Deki M., Nitta S., Honda Y., Amano H.

    Japanese Journal of Applied Physics   58 巻 ( SC )   2019年

  46. Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

    Nagamatsu K., Ando Y., Ye Z., Barry O.L., Tanaka A., Deki M., Nitta S., Honda Y., Pristovsek M., Amano H.

    Japanese Journal of Applied Physics   57 巻 ( 10 )   2018年10月

  47. m-Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m-Plane GaN Substrates Open Access

    Tanaka A., Ando Y., Nagamatsu K., Deki M., Cheong H., Ousmane B., Kushimoto M., Nitta S., Honda Y., Amano H.

    Physica Status Solidi (A) Applications and Materials Science   215 巻 ( 9 )   2018年5月

  48. Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

    Usami S., Ando Y., Tanaka A., Nagamatsu K., Deki M., Kushimoto M., Nitta S., Honda Y., Amano H., Sugawara Y., Yao Y.Z., Ishikawa Y.

    Applied Physics Letters   112 巻 ( 18 )   2018年4月

  49. Development of sustainable smart society based on transformative electronics

    Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pnstovsek M., Kawai H., Yagi S., Amano H.

    Technical Digest - International Electron Devices Meeting, IEDM     頁： 30.1.1 - 30.1.4   2018年1月

  50. Theoretical study of the electronic structure of threading edge dislocations in GaN

    Nakano T., Araidai M., Shiraishi K., Tanaka A., Honda Y., Amano H.

    ECS Transactions   86 巻 ( 12 ) 頁： 41 - 49   2018年

  51. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

    Sang L., Ren B., Sumiya M., Liao M., Koide Y., Tanaka A., Cho Y., Harada Y., Nabatame T., Sekiguchi T., Usami S., Honda Y., Amano H.

    Applied Physics Letters   111 巻 ( 12 )   2017年9月

  52. Effect of dislocations on the growth of p-type GaN and on the characteristics of p–n diodes

    Usami S., Miyagoshi R., Tanaka A., Nagamatsu K., Kushimoto M., Deki M., Nitta S., Honda Y., Amano H.

    Physica Status Solidi (A) Applications and Materials Science   214 巻 ( 8 )   2017年8月

  53. Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

    Tanaka A., Barry O., Nagamatsu K., Matsushita J., Deki M., Ando Y., Kushimoto M., Nitta S., Honda Y., Amano H.

    Physica Status Solidi (A) Applications and Materials Science   214 巻 ( 8 )   2017年8月

  54. Effect of V/III ratio on the surface morphology and electrical properties of m–plane (101¯0) GaN homoepitaxial layers

    Barry O.I., Tanaka A., Nagamatsu K., Bae S.Y., Lekhal K., Matsushita J., Deki M., Nitta S., Honda Y., Amano H.

    Journal of Crystal Growth   468 巻   頁： 552 - 556   2017年6月

  55. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

    Tanaka A., Matsuhata H., Kawabata N., Mori D., Inoue K., Ryo M., Fujimoto T., Tawara T., Miyazato M., Miyajima M., Fukuda K., Ohtsuki A., Kato T., Tsuchida H., Yonezawa Y., Kimoto T.

    Journal of Applied Physics   119 巻 ( 9 )   2016年3月

  56. Effects of basal plane dislocation density in 4H-SiC substrate on degradation of body-diode forward voltage

    Kawabata N., Tanaka A., Tsujimura M., Ueji Y., Omote K., Yamaguchi H., Matsuhata H., Fukuda K.

    Materials Science Forum   858 巻   頁： 384 - 388   2016年

  57. Annealing temperature dependence of dislocation extension and its effect on electrical characteristic of 4H-SiC PIN diode

    Tanaka A., Kawabata N., Tsujimura M., Furukawa Y., Hoshino T., Ueji Y., Omote K., Yamaguchi H., Matsuhata H., Fukuda K.

    Materials Science Forum   821-823 巻   頁： 315 - 318   2015年

  58. Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

    Mizushima T., Takenaka K., Fujisawa H., Kato T., Harada S., Tanaka Y., Okamoto M., Sometani M., Okamoto D., Kumagai N., Matsunaga S., Deguchi T., Arai M., Hatakeyama T., Makifuchi Y., Araoka T., Oose N., Tsutsumi T., Yoshikawa M., Tatera K., Tanaka A., Ogata S., Nakayama K., Hayashi T., Asano K., Harashima M., Sano Y., Morisaki E., Takei M., Miyajima M., Kimura H., Otsuki A., Yonezawa Y., Fukuda K., Okumura H., Kimoto T.

    Proceedings of the International Symposium on Power Semiconductor Devices and ICs     頁： 277 - 280   2014年

  59. High performance SiC IEMOSFET/SBD module

    S. Harada, Y. Hoshi, Y. Harada, T. Tsuji, A. Kinoshita, M. Okamoto, Y. Makifuchi, Y. Kawada, K. Imamura, M. Gotoh, T. Tawara, S. Nakamata, T. Sakai, F. Imai, N. Ohse, M. Ryo, A. Tanaka, K. Tezuka, T. Tsuyuki, S. Shimizu, N. Iwamuro, Y. Sakai, H. Kimura, K. Fukuda, H. Okumura

    Materials Science Forum   717-720 巻   頁： 1053 - 1058   2012年

  60. Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si<inf>2</inf>H<inf>6</inf> Open Access

    Akhtar S., Tanaka A., Usami K., Tsuchiya Y., Oda S.

    Thin Solid Films   517 巻 ( 1 ) 頁： 317 - 319   2008年11月

  61. Visible electroluminescence from spherical-shaped silicon nanocrystals Open Access

    Cheong H.J., Tanaka A., Hippo D., Usami K., Tsuchiya Y., Mizuta H., Oda S.

    Japanese Journal of Applied Physics   47 巻 ( 10 PART 1 ) 頁： 8137 - 8140   2008年10月

  62. Synthesis of assembled nanocrystalline si dots film by the langmuir-blodgett technique

    Tanaka A., Tsuchiya Y., Usami K., Saito S.i., Arai T., Mizuta H., Oda S.

    Japanese Journal of Applied Physics   47 巻 ( 5 PART 1 ) 頁： 3731 - 3734   2008年5月

  63. Light emission from size reduced nanocrystal silicon quantum dots

    Cheong H.J., Tanaka A., Hippo D., Usami K., Tsuchiya Y., Mizuta H., Oda S.

    Optics InfoBase Conference Papers     2007年

  64. Light emission from size reduced nanocrystal silicon quantum dots

    Cheong H.J., Tanaka A., Hippo D., Usami K., Tsuchiya Y., Mizuta H., Oda S.

    Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series     2007年

  65. Light emission from size reduced nanocrystal silicon quantum dots

    Cheong H.J., Tanaka A., Hippo D., Usami K., Tsuchiya Y., Mizuta H., Oda S.

    Conference on Lasers and Electro-Optics, 2007, CLEO 2007     2007年

  66. Light emission from size reduced nanocrystal silicon quantum dots

    Cheong H.J., Tanaka A., Hippo D., Usami K., Tsuchiya Y., Mizuta H., Oda S.

    Optics InfoBase Conference Papers     2007年

  67. Light emission from size reduced nanocrystal silicon quantum dots

    Cheong H.J., Tanaka A., Hippo D., Usami K., Tsuchiya Y., Mizuta H., Oda S.

    Optics InfoBase Conference Papers     2007年

  68. High-density assembly of nanocrystalline silicon quantum dots Open Access

    Tanaka A., Yamahata G., Tsuchiya Y., Usami K., Mizuta H., Oda S.

    Current Applied Physics   6 巻 ( 3 ) 頁： 344 - 347   2006年6月

  69. Nanocrystalline silicon quantum dot devices

    Oda S., Huang S.Y., Salem M.A., Hippo D., Tanaka A., Tsuchiya Y., Mizuta H.

    ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings     頁： 1045 - 1048   2006年

  70. Visible electroluminescence from size-controlled silicon quantum dots

    Cheong H.J., Hippo D., Tanaka A., Usami K., Tsuchiya Y., Mizuta H., Oda S.

    Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006     2006年

  71. A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures

    Hippo D., Chong H.J., Kawata Y., Tanaka A., Tsuchiya Y., Mizuta H., Oda S., Urakawa K., Koshida N.

    2005 IEEE International Conference on Group IV Photonics   2005 巻   頁： 114 - 116   2005年

  72. Assembly of nanocrystalline silicon quantum dots based on a colloidal solution method

    Tanaka A., Yamahata G., Tsuchiya Y., Usami K., Mizuta H., Oda S.

    2005 5th IEEE Conference on Nanotechnology   2 巻   頁： 795 - 798   2005年

  73. Formation of an ordered array of nanocrystalline Si dots by using a solution droplet evaporation method

    Tsuchiya Y., Iwasa T., Tanaka A., Usami K.I., Mizuta H., Oda S.

    Materials Research Society Symposium Proceedings   818 巻   頁： 347 - 352   2004年